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| DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 Aug 20 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES * Forward current: 1 A * Reverse voltage: 20 V * Very low forward voltage * Ultra small SMD package * Flat leads: excellent coplanarity and improved thermal behaviour. APPLICATIONS * Low voltage rectification * High efficiency DC/DC conversion * Switch mode power supply * Inverse polarity protection * Low power consumption applications. DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection in a SOT666 ultra small SMD plastic package. 1 2 3 handbook, halfpage 6 PMEG2010EV PINNING PIN 1 2 3 4 5 6 cathode cathode anode anode cathode cathode DESCRIPTION 5 4 1, 2 5, 6 3, 4 MHC310 Marking code: F1. Fig.1 Simplified outline (SOT666) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VR IF IFSM Tstg Tj Tamb Note 1. Only valid if pins 3 and 4 are connected in parallel. PARAMETER continuous reverse voltage continuous forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature t = 8.3 ms half sinewave; JEDEC method; note 1 CONDITIONS - - - -65 - -65 MIN. 1 8 +150 125 +125 MAX. 20 V A A C C C UNIT 2003 Aug 20 2 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 note 2 Notes 1. Refer to SOT666 standard mounting conditions. 2. Mounted on printed circuit-board, 1 cm2 copper area. Soldering The only recommended soldering method is reflow soldering. ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage IF = 10 mA IF = 100 mA IF = 1 000 mA; note 1; see Fig.2 IR reverse current VR = 5 V; note 2 VR = 8 V; note 2 VR = 15 V; note 2; see Fig.3 Cd Notes 1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm2 copper solder land. 2. Pulse test: tp = 300 s; = 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 CONDITIONS TYP. 240 300 480 5 7 10 19 PMEG2010EV VALUE 405 215 UNIT K/W K/W MAX. 270 350 550 10 20 50 25 UNIT mV mV mV A A A pF 2003 Aug 20 3 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode GRAPHICAL DATA PMEG2010EV 103 handbook, halfpage IF (mA) 102 MHC311 105 handbook, halfpage IR (A) (1) MHC312 104 103 (1) (2) (3) (2) 10 102 (3) 1 10 10-1 0 0.2 0.4 VF (V) 0.6 1 0 5 10 15 20 VR (V) 25 (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 80 MHC313 Cd (pF) 60 40 20 0 0 5 10 15 VR (V) 20 f = 1 MHz; Tamb = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2003 Aug 20 4 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode PACKAGE OUTLINE PMEG2010EV Plastic surface mounted package; 6 leads SOT666 D A E X S YS HE 6 5 4 pin 1 index A 1 e1 e 2 bp 3 wMA Lp detail X c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1 OUTLINE VERSION SOT666 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 01-01-04 01-08-27 2003 Aug 20 5 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION PMEG2010EV This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2003 Aug 20 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp7 Date of release: 2003 Aug 20 Document order number: 9397 750 11684 |
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